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No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

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Chongqing Silian Optoelectronic Science & Technology Co., Ltd.

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No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

Name: No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
Brand: Silian
Price: 1 USD

China No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance wholesale

Brand Name : Silian

Model Number : Customized

Certification : SGS/ ISO

Place of Origin : Chongqing，China

MOQ : 500pcs

Price : Negotiable

Payment Terms : Western Union, T/T, MoneyGram

Supply Ability : 20,000 pcs/month

Delivery Time : 5-8 weeks

Packaging Details : 1pcs/12pcs/25 pcs

Diameter : 150.1±0.1

Flat Length : 47.5±1

Bow : 0 ~ (-10) um

Color : Transparent; other colors

Material : High Purity and Monocrystalline AL2O3

Surface Crystal Orientation : C-Plane 0°±0.1°

Primary Flat Orientation : A-plane 0°±0.5°

Broke Edge : ≤3mm

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6-inch sapphire substrate with good light transmittance

Product Description

The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.

Technical Specification

Properties	Unit	6 inch substrate
Diameter	mm	150.1±0.1
Flat Length	mm	47.5±1
Material	High Purity and Monocrystalline AL2O3
Surface Crystal Orientation	C-Plane 0°±0.1°
Primary Flat Orientation	A-plane 0°±0.5°
Broke Edge	≤3mm
Crack	No Cracking
Defect	No Wrappage,Twin Crystal or Crystal Boundary
EPD	＜1000/cm²

Performance research

The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.

No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

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No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

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