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100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

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Chongqing Silian Optoelectronic Science & Technology Co., Ltd.

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100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

Name: 100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength
Brand: Silian
Price: 1 USD

China 100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength wholesale

Brand Name : Silian

Model Number : Customized

Certification : SGS/ ISO

Place of Origin : Chongqing，China

MOQ : 500pcs

Price : Negotiable

Payment Terms : Western Union, T/T, MoneyGram

Supply Ability : 20,000 pcs/month

Delivery Time : 5-8 weeks

Packaging Details : 1pcs/12pcs/25 pcs

Name : 4 Inch Sapphire Substrate

purity : ≥99.998%

Front Side Surface : Mirror polished , EPI-Ready

Orientation : C plane tiled M axis 0.20°±0.1°

Color : Colorless and transparent

Back side Roughness : 0.8-1.2um

Diameter : 100 ± 0.15mm

Thickness : 650 ± 20um

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4 Inch Sapphire Substrate Is Widely Used

Product Description

The epitaxial layers of GaN-based materials and devices are mainly grown on sapphire substrates. Sapphire substrate has many advantages: firstly, the production technology of sapphire substrate is mature and the device quality is good; secondly, sapphire is very stable and can be used in the high-temperature growth process; finally, sapphire has high mechanical strength and is easy to handle And cleaning. Therefore, most processes generally use sapphire as the substrate.

Technical Specification

Item		4"	Unit
Dimension	Diameter:	100 ± 0.15	mm
	Thickness:	650 ± 20	um
	Primary Flat:	30＋1.0	mm
Orientation	Surface-cut:	C plane : Tilt 0.2°±0.1° in M axis /	~
	Primary Flat:	A plane : 0° ± 0.15°	~
Flatness	Bow:	0 ~ (-10)	um
	Warp:	≤ 20	um
	Total Thickness Variation (TTV):	≤ 10	um
	LTV	≤2.5	um
	Front side Roughness	≤0.2	nm
	Back side Roughness	0.8-1.2	um
	Cleanliness	No particles and fingerprints	~
4.Material Quality	High-purity mono-crystal Al2O3		~
5.Package	Wafers are packed in cleaned wafer cassettes containing 25 wafers under clean room environment.		~
6.Trace Ability	Wafers shall be traceable with respect to cassette number. The wafer box should be marked with a removable label showing the date, the cassette number and the quantity.		~
7.Laser Mark	Front or Back side		~

Working principle

The working principle of the LED is that in the case of forward conduction, the electrons and holes injected into the P/N section of the diode meet and recombine, and the potential energy is converted into light energy. The wavelength of the emitted photons (that is, the color of light) is determined by the energy band width of the semiconductor. The current blue and green LED devices are based on group III nitride semiconductors, which is mainly GaN, and InNAlN is the supplementary four. Yuan AlGaInN alloy system.

To epitaxially grow a GaN film on a sapphire substrate, firstly a two-step epitaxial GaN buffer layer on the substrate (low-temperature epitaxial GaN nucleation layer, then high-temperature epitaxial u-GaN buffer layer); the second step is to grow Si-doped n-GaN The third step is to grow a multifunctional quantum well to provide a radiation recombination center, allowing electrons and holes to recombine and emit light; the fourth step to grow a Mg-doped p-GaN layer to provide hole injection. Normally, the LED structure is as shown in the picture.

100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

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