Dia 51mm 2 inch Sapphire Substrate Wafer Double Side Polished DSP Wafer
Description
Al2O3 single crystal (Sapphire, also known as white stones, sapphire) has good thermal properties, excellent electrical characteristics and dielectric properties, and anti-chemical corrosion, it is high temperature, thermal conductivity, high hardness, infrared transparent, chemically stable good. Widely used in high-temperature infrared window materials and III-V nitride epitaxial film substrate and a variety of materials to meet the growing blue, purple, white light-emitting diode (LED) and blue laser (LD) needs, Branch Crystal company specializing in the production of high quality polished sapphire crystal and epitaxial substrates will provide you with a lot of high quality and low price monocrystalline substrate.
Specification
| Parameter |
Specification |
| Material |
High purity ＞99.995% |
| Diameter |
51±0.1mm |
| Thickness |
300+10/-15μm |
| Crystal Orientation |
C-plane 0° to M-axis ±0.2°
C-plane 0° to A-axis ±0.2° |
| Bow |
≤10μm |
| Warp |
≤15μm |
| TTV |
≤7μm |
| Front side Roughness |
≤0.5nm |
| Back side Roughness |
≤0.5nm |
| Wafer Edge |
Type R |
| Roundness |
≤0.05mm |
| Transparency |
410~780nm:≥85% |
| ROR |
Min≥200N |
| Harnesses |
≥1450 |
| Appearance |
Scratch:≤0.1mm ≤2
Bubble: Dia≤0.1mm ≤3 |
The 2inch DSP double side polished sapphire substrates can be manufactured from high quality optical grade Kyropoulos grown sapphire crystals.
high purity single crystal sapphire epitaxial substrate is suitable for direct epitaxial process, PSS process, ALN process and other epitaxial methods. It has the characteristics of uniform wavelength, high brightness and small STD. we can accept product customization for the technical specifications, and produce sapphire single / double polishing substrates with different external dimensions based on C (0001), a (11-20) and m (1100) crystal orientations, with notch or straight edge crystal orientations.
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51mm Double Side Polished Sapphire Substrates DSP Wafer Images
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